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| Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 MJE2955T, MJE3055T MJE2955T MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O M IN. 14.42 9.63 3.56 M A X. N L O 123 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 A O ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 4 A; IB = 0.4 A D.C. current gain IC = 4 A; VCE = 4 V All dim insions in m m . K VCBO VCEO IC Ptot Tj VCEsat hFE max. max. max. max. max. max. min max. 70 60 10 75 150 V V A W C 1.1 V 20 100 RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO max. max. max. 70 V 60 V 5.0 V Continental Device India Limited Data Sheet Page 1 of 3 MJE2955T, MJE3055T Collector current Base current Total power dissipation up to TC = 25C Derate above 25C Junction temperature Storage temperature THERMAL RESISTANCE From junction to case CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current IE = 0; VCB = 70V IE = 0; VCB = 70V; TC = 150C VEB(off) = 1.5V; VCE = 70V VEB(off) = 1.5V; V CE = 70V; T C = 150C IB = 0; VCE = 30V Emitter cut-off current IC = 0; VEB = 5V Breakdown voltages IC = 200 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 4 A; IB = 0.4 A IC = 10 A; IB = 3.3 A Base-emitter on voltage IC = 4A; VCE = 4V D.C. current gain IC = 4A; VCE = 4V IC = 10A; VCE = 4V Transition frequency IC = 0.5A; VCE = 10V; f = 500 KHz * Pulse test: pulse width 300 s; duty cycle 2%. IC IB Ptot Tj Tstg Rth j-c max. 10 A max. 6A max. 75 W max. 0.6 W /C max. 150 C -65 to +150 C = 1.67 C/W ICBO ICBO ICEX ICEX ICEO IEBO VCEO(sus)* VCBO VEBO VCEsat* VCEsat* VBE(on)* hFE* hFE* fT max. max. max. max. max. max. min. min. min. max. max. max. min. max. min. min. 1.0 10 1.0 5.0 0.7 mA mA mA mA mA 5 mA 60 V 70 V 5.0 V 1.1 V 8.0 V 1.8 V 20 100 5 2.0 MHz Continental Device India Limited Data Sheet Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3 |
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